Nvm with charge pump and method therefor

A non-volatile memory device comprises an array of memory cells (18) and a charge pump (24) coupled to the memory cells. The charge pump is dynamically reconfigurable to operate in a bypass mode to provide a first voltage to the memory cells, a program mode to provide the first voltage to the memory...

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Bibliographic Details
Main Authors CUNNINGHAM, JEFFREY C, GASQUET, HORACIO P
Format Patent
LanguageChinese
English
Published 01.08.2017
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Summary:A non-volatile memory device comprises an array of memory cells (18) and a charge pump (24) coupled to the memory cells. The charge pump is dynamically reconfigurable to operate in a bypass mode to provide a first voltage to the memory cells, a program mode to provide the first voltage to the memory cells, and an erase mode to provide a second voltage that has inverse polarity of the first voltage.
Bibliography:Application Number: TW20132131427