Semiconductor device and method

A vertical gate all around (VGAA) is provided. In embodiments, the VGAA has a nanowire with a first contact pad and a second contact pad. A gate electrode is utilized to help define a channel region within the nanowire. In additional embodiments multiple nanowires, multiple bottom contacts, multiple...

Full description

Saved in:
Bibliographic Details
Main Authors HSIEH, MINGTA, TSAI, CHINGWEI, WANG, CHIHHAO, OHTOU, TETSU
Format Patent
LanguageChinese
English
Published 11.06.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
Online AccessGet full text

Cover

Abstract A vertical gate all around (VGAA) is provided. In embodiments, the VGAA has a nanowire with a first contact pad and a second contact pad. A gate electrode is utilized to help define a channel region within the nanowire. In additional embodiments multiple nanowires, multiple bottom contacts, multiple top contacts, and multiple gate contacts are utilized.
AbstractList A vertical gate all around (VGAA) is provided. In embodiments, the VGAA has a nanowire with a first contact pad and a second contact pad. A gate electrode is utilized to help define a channel region within the nanowire. In additional embodiments multiple nanowires, multiple bottom contacts, multiple top contacts, and multiple gate contacts are utilized.
Author TSAI, CHINGWEI
WANG, CHIHHAO
HSIEH, MINGTA
OHTOU, TETSU
Author_xml – fullname: HSIEH, MINGTA
– fullname: TSAI, CHINGWEI
– fullname: WANG, CHIHHAO
– fullname: OHTOU, TETSU
BookMark eNrjYmDJy89L5WSQD07NzUzOz0spTS7JL1JISS3LTE5VSMxLUchNLcnIT-FhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfEh4Z6mFuamhuZOTsZEKAEAy5wm0w
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID TWI587517BB
GroupedDBID EVB
ID FETCH-epo_espacenet_TWI587517BB3
IEDL.DBID EVB
IngestDate Fri Jul 19 16:50:42 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language Chinese
English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_TWI587517BB3
Notes Application Number: TW20150101344
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170611&DB=EPODOC&CC=TW&NR=I587517B
ParticipantIDs epo_espacenet_TWI587517BB
PublicationCentury 2000
PublicationDate 20170611
PublicationDateYYYYMMDD 2017-06-11
PublicationDate_xml – month: 06
  year: 2017
  text: 20170611
  day: 11
PublicationDecade 2010
PublicationYear 2017
RelatedCompanies TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
RelatedCompanies_xml – name: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
Score 3.2112768
Snippet A vertical gate all around (VGAA) is provided. In embodiments, the VGAA has a nanowire with a first contact pad and a second contact pad. A gate electrode is...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
Title Semiconductor device and method
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170611&DB=EPODOC&locale=&CC=TW&NR=I587517B
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMUmyNDY0TjPVBfZQ0nRNkg0sdZMSjRN1gU1tE0PzVNAB5-BVvn5mHqEmXhGmEUwMGbC9MOBzQsvBhyMCc1QyML-XgMvrAsQglgt4bWWxflImUCjf3i3E1kUN2jsGnQUDzLsuTrauAf4u_s5qzs62IeFqfkG2nqbAhjmw8cTMwApsRJuDFn-5hjmB9qQUIFcoboIMbAFAs_JKhBiYqjKEGTidYfeuCTNw-EKnu4FMaM4rFmGQDwatYs_PAx3Pml-kkJIKyuEKiXkpCpA7oEUZFNxcQ5w9dIE2xcM9FR8SDnOSk7EYAwuwr58qwaBgZmSenJSYamhpYZpmkphmAWy8JAHbECZmpqmWZuapSZIMkjiNkcIjJ83ABQod0BonQ0MZBpaSotJUWWBtWpIkBw4IADJkeQ0
link.rule.ids 230,309,783,888,25578,76884
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMUmyNDY0TjPVBfZQ0nRNkg0sdZMSjRN1gU1tE0PzVNAB5-BVvn5mHqEmXhGmEUwMGbC9MOBzQsvBhyMCc1QyML-XgMvrAsQglgt4bWWxflImUCjf3i3E1kUN2jsGnQUDzLsuTrauAf4u_s5qzs62IeFqfkG2nqbAhjmw8cTMwApsYFuATtl3DXMC7UkpQK5Q3AQZ2AKAZuWVCDEwVWUIM3A6w-5dE2bg8IVOdwOZ0JxXLMIgHwxaxZ6fBzqeNb9IISUVlMMVEvNSFCB3QIsyKLi5hjh76AJtiod7Kj4kHOYkJ2MxBhZgXz9VgkHBzMg8OSkx1dDSwjTNJDHNAth4SQK2IUzMTFMtzcxTkyQZJHEaI4VHTp6B0yPE1yfex9PPW5qBCxRSoPVOhoYyDCwlRaWpssCatSRJDhwoAAbOe_0
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Semiconductor+device+and+method&rft.inventor=HSIEH%2C+MINGTA&rft.inventor=TSAI%2C+CHINGWEI&rft.inventor=WANG%2C+CHIHHAO&rft.inventor=OHTOU%2C+TETSU&rft.date=2017-06-11&rft.externalDBID=B&rft.externalDocID=TWI587517BB