Semiconductor device and method

A vertical gate all around (VGAA) is provided. In embodiments, the VGAA has a nanowire with a first contact pad and a second contact pad. A gate electrode is utilized to help define a channel region within the nanowire. In additional embodiments multiple nanowires, multiple bottom contacts, multiple...

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Bibliographic Details
Main Authors HSIEH, MINGTA, TSAI, CHINGWEI, WANG, CHIHHAO, OHTOU, TETSU
Format Patent
LanguageChinese
English
Published 11.06.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
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Summary:A vertical gate all around (VGAA) is provided. In embodiments, the VGAA has a nanowire with a first contact pad and a second contact pad. A gate electrode is utilized to help define a channel region within the nanowire. In additional embodiments multiple nanowires, multiple bottom contacts, multiple top contacts, and multiple gate contacts are utilized.
Bibliography:Application Number: TW20150101344