Apparatus and methods for implementing predicted systematic error correction in location specific processing

A method of modifying an upper layer of a workpiece using a gas cluster ion beam (GCIB) is described. The method includes collecting parametric data relating to an upper layer of a workpiece, and determining a predicted systematic error response for applying a GCIB to the upper layer to alter an ini...

Full description

Saved in:
Bibliographic Details
Main Authors CHAE, SOO DOO, LAROSE, JOSHUA, LAGANA-GIZZO, VINCENT, RUSSELL, NOEL
Format Patent
LanguageChinese
English
Published 01.06.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method of modifying an upper layer of a workpiece using a gas cluster ion beam (GCIB) is described. The method includes collecting parametric data relating to an upper layer of a workpiece, and determining a predicted systematic error response for applying a GCIB to the upper layer to alter an initial profile of a measured attribute by using the parametric data. Additionally, the method includes identifying a target profile of the measured attribute, directing the GCIB toward the upper layer of the workpiece, and spatially modulating an applied property of the GCIB, based at least in part on the predicted systematic error response and the parametric data, as a function of position on the upper layer of the workpiece to achieve the target profile of the measured attribute.
Bibliography:Application Number: TW20154104882