Via characterization for bcd and depth metrology

An optical metrology device determines physical characteristics of at least one via in a sample, such as a through-silicon vias (TSV), using signal strength data for modeling of the bottom critical dimension (BCD) and/or for refinement of the data used to determine a physical characteristic of the v...

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Bibliographic Details
Main Authors XIAO, KE, PETERSON, BRENNAN, JOHNSON, TIMOTHY A
Format Patent
LanguageChinese
English
Published 01.05.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An optical metrology device determines physical characteristics of at least one via in a sample, such as a through-silicon vias (TSV), using signal strength data for modeling of the bottom critical dimension (BCD) and/or for refinement of the data used to determine a physical characteristic of the via, such as BCD and/or depth. The metrology device obtains interferometric data and generates height and signal strength data, from which statistical properties may be obtained. The height and signal strength data for the via is refined by removing noise using the statistical property, and the BCD for the via may be determined using the refined height and signal strength data. In one implementation, a signal strength via map for a via is generated using signal strength data and is fit to a model to determine the BCD for the via.
Bibliography:Application Number: TW20143144384