Highly scalable single-poly non-volatile memory cell

• Main Authors: HSU, TE-HSUN, LI, CHUN-HSIAO, CHEN, HSUEN-WEI
• Format: Patent
• Language: Chinese; English
• Published: 01.04.2017
• Subjects: ELECTRICITY

A nonvolatile memory cell (1) includes a semiconductor substrate (100), a first OD region (210), a second OD region (220), an isolation region (200) separating the first OD region (210) from the second OD region (220), a PMOS select transistor (10) disposed on the first OD region (210), and a PMOS floating gate transistor (20) serially connected to the PMOS select transistor (10) on the first OD region (210). The PMOS floating gate transistor (20) includes a floating gate (120) overlying the first OD region (210). A memory P well (102) is disposed in the semiconductor substrate (100). A memory N well (104) is disposed in the memory P well (102). The memory P well (102) overlaps with the first OD region (210) and the second OD region (220). The memory P well (102) has a junction depth (d1) that is deeper than a trench depth (d) of the isolation region (200). The memory N well (104) has a junction depth (d2) that is shallower than the trench depth (d) of the isolation region (200).