Texture etching solution composition and texture etching method of crystalline silicon wafers (1)
Disclosed herein is an etching composition for texturing a crystalline silicon wafer, comprising, based on a total amount of the composition: (A) 0.1 to 20 wt% of an alkaline compound; (B) 0.1 to 50 wt% of a cyclic compound having a boiling point of 100°C or more; (C) 0.00001 to 10 wt% of a silica-c...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
11.03.2017
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Disclosed herein is an etching composition for texturing a crystalline silicon wafer, comprising, based on a total amount of the composition: (A) 0.1 to 20 wt% of an alkaline compound; (B) 0.1 to 50 wt% of a cyclic compound having a boiling point of 100°C or more; (C) 0.00001 to 10 wt% of a silica-containing compound; and (D) residual water. The etching composition can maximize the absorbance of light of the surface of a crystalline silicon wafer. |
---|---|
Bibliography: | Application Number: TW20110128913 |