Bond pad with multiple layer over pad metallization and method of formation

A semiconductor device structure has a semiconductor die that has a bond pad with a passivation layer surrounding a portion of the bond pad. A nickel layer, which is deposited, is on the inner portion. A space is between a sidewall of the nickel layer and the passivation layer and extends to the bon...

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Bibliographic Details
Main Author MATHEW, VARUGHESE
Format Patent
LanguageChinese
English
Published 11.04.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device structure has a semiconductor die that has a bond pad with a passivation layer surrounding a portion of the bond pad. A nickel layer, which is deposited, is on the inner portion. A space is between a sidewall of the nickel layer and the passivation layer and extends to the bond pad. A palladium layer is over the nickel layer and fills the space. The space is initially quite small but is widened by an isotropic etch so that when the palladium layer is deposited, the space is sufficiently large so that the deposition of palladium is able to fill the space. Filling the space results in a structure in which the palladium contacts the nickel layer, the passivation layer and the bond pad.
Bibliography:Application Number: TW201099144198