Polishing composition and polishing method

Disclosed is a polishing composition containing a substance that lowers the pH of an aqueous solution in the presence of an oxidizing agent, and a pH-buffering agent. The difference in absolute value between the pH of the polishing composition immediately after adding a 31 % by weight hydrogen perox...

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Bibliographic Details
Main Authors HIRANO, TATSUHIKO, TAMADA, SHUICHI, IZAWA, YOSHIHIRO, ONISHI, SHOGO
Format Patent
LanguageChinese
English
Published 11.03.2016
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Summary:Disclosed is a polishing composition containing a substance that lowers the pH of an aqueous solution in the presence of an oxidizing agent, and a pH-buffering agent. The difference in absolute value between the pH of the polishing composition immediately after adding a 31 % by weight hydrogen peroxide solution thereto at 5.16 g per 100 g of the polishing composition and the pH of the polishing composition after leaving to stand for eight days from the addition of hydrogen peroxide is 0.5 or less. Also disclosed is another polishing composition containing a substance that lowers the pH of an aqueous solution in the presence of an oxidizing agent, and a pH-controlling agent. In comparison to the amount of a basic substance in the polishing composition immediately after adding a 31% by weight hydrogen peroxide solution thereto at 5.16 g per 100 ml of the polishing composition, the amount of a basic substance in the polishing composition after leaving to stand for eight days from the addition of hydrogen peroxid
Bibliography:Application Number: TW20121111060