NONVOLATILE MEMORY STRUCTURE

A nonvolatile memory structure included a P substrate, an N well in the P substrate, and a PMOS storage transistor. The PMOS storage transistor includes a floating gate and an auxiliary gate disposed in close proximity to the floating gate. The floating gate and the auxiliary gate are disposed direc...

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Bibliographic Details
Main Authors CHEN, WEI REN, HSU, TE HSUN, TSAO, MU YING, CHEN, YING JE, CHEN, HSUEN WEI
Format Patent
LanguageChinese
English
Published 01.03.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A nonvolatile memory structure included a P substrate, an N well in the P substrate, and a PMOS storage transistor. The PMOS storage transistor includes a floating gate and an auxiliary gate disposed in close proximity to the floating gate. The floating gate and the auxiliary gate are disposed directly on the same floating gate channel of the PMOS storage transistor. A gap is provided between the auxiliary gate and the floating gate such that the auxiliary gate and the floating gate are separated from each other at least directly above the floating gate channel.
Bibliography:Application Number: TW20143132501