Film forming method, manufacturing method of semiconductor device using the same, film forming apparatus, and semiconductor device

Provided is a semiconductor device capable of preventing destruction of an electrode having a pillar shape and densely arranged. The semiconductor device having a field-effect transistor and a capacitor having a pillar shape, the semiconductor device includes: a first electrode having a pillar shape...

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Bibliographic Details
Main Authors KADONAGA, KENTARO, SUZUKI, KEISUKE, MOROZUMI, YUICHIRO
Format Patent
LanguageChinese
English
Published 11.02.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a semiconductor device capable of preventing destruction of an electrode having a pillar shape and densely arranged. The semiconductor device having a field-effect transistor and a capacitor having a pillar shape, the semiconductor device includes: a first electrode having a pillar shape and electrically connected to an impurity diffusion region of the field-effect transistor; a dielectric film formed at least on a side of the first electrode; a second electrode formed on the dielectric film; and a support film extending in a direction crossing a length direction of the first electrode having the pillar shape, and formed by a boron-added silicon nitride film connected to the first electrode by penetrating through at least a part of the second electrode.
Bibliography:Application Number: TW20121127851