Apparatus and method for the production of ingots

• Main Authors: STODDARD, NATHAN, VON AMMON, WILFRIED
• Format: Patent
• Language: Chinese; English
• Published: 01.12.2015
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Apparatus (1) and method for a crucible-less production of silicon ingots, wherein a support with a seed layer (7) and a liquid layer (32) is gradually lowered in a temperature field with a vertical gradient to solidify the liquid layer (32) in a controlled way.