Apparatus and method for the production of ingots

Apparatus (1) and method for a crucible-less production of silicon ingots, wherein a support with a seed layer (7) and a liquid layer (32) is gradually lowered in a temperature field with a vertical gradient to solidify the liquid layer (32) in a controlled way.

Saved in:
Bibliographic Details
Main Authors STODDARD, NATHAN, VON AMMON, WILFRIED
Format Patent
LanguageChinese
English
Published 01.12.2015
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online AccessGet full text

Cover

More Information
Summary:Apparatus (1) and method for a crucible-less production of silicon ingots, wherein a support with a seed layer (7) and a liquid layer (32) is gradually lowered in a temperature field with a vertical gradient to solidify the liquid layer (32) in a controlled way.
Bibliography:Application Number: TW20132114422