Doped zro2 capacitor materials and structures, methods of making dielectric material structures, and methods of fabricating microelectronic devices
A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals, and alumina as a dopant or a...
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Main Authors | , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
21.10.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals, and alumina as a dopant or alloying secondary material. Such composite dielectric material can be formed by vapor deposition processes, e.g., ALD, using suitable precursors, to form microelectronic devices such as ferroelectric high k capacitors, gate structures, DRAMs, and the like. |
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Bibliography: | Application Number: TW201099112063 |