Photoresist composition and method of manufacturing a thin-film transistor substrate using the same

In one example, a photoresist composition includes about 1 to about 70 parts by weight of a first binder resin including a repeat unit represented by the following Chemical Formula 1, about 1 to about 70 parts by weight of a second binder resin including a repeat unit represented by the following Ch...

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Bibliographic Details
Main Authors YOUN, HYOC-MIN, PARK, JEONG-MIN, LEE, HI-KUK, JUNG, DOO-HEE, KOO, KI-HYUK
Format Patent
LanguageChinese
English
Published 01.08.2015
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:In one example, a photoresist composition includes about 1 to about 70 parts by weight of a first binder resin including a repeat unit represented by the following Chemical Formula 1, about 1 to about 70 parts by weight of a second binder resin including a repeat unit represented by the following Chemical Formula 2, about 0.5 to about 10 parts by weight of a photo-acid generator, about 1 to about 20 parts by weight of a cross-linker and about 10 to about 200 parts by weight of a solvent. The photoresist composition may improve the heat resistance and adhesion ability of a photoresist pattern. wherein R1 and R2 independently represent an alkyl group having 1 to 5 carbon atoms, and n and m independently represent a natural number.
Bibliography:Application Number: TW200897113388