Carrier substrate and method for producing semiconductor chip

A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically in...

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Main Authors DENNEMARCK, JENS, GUENTHER, EWALD KARL MICHAEL, ZULL, HERIBERT, KAEMPF, MATHIAS, BOEHM, BERND, VEIT, THOMAS, PLOESSL, ANDREAS, PERZLMAIER, KORBINIAN
Format Patent
LanguageChinese
English
Published 01.07.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.
Bibliography:Application Number: TW20121104664