Method for manufacturing nitride semiconductor device

A method for manufacturing a nitride semiconductor device, includes forming a p-type nitride semiconductor layer on a substrate, from an organic metal compound as a group III element source material, ammonia and a hydrazine derivative as group V element source materials, and a Mg source material gas...

Full description

Saved in:
Bibliographic Details
Main Authors TAKEMI, MASAYOSHI, OHNO, AKIHITO
Format Patent
LanguageChinese
English
Published 11.02.2015
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
Online AccessGet full text

Cover

More Information
Summary:A method for manufacturing a nitride semiconductor device, includes forming a p-type nitride semiconductor layer on a substrate, from an organic metal compound as a group III element source material, ammonia and a hydrazine derivative as group V element source materials, and a Mg source material gas as a p-type impurity source material. The flow velocity of the source material gases including the group III element source material, the group V element source materials, and the p-type impurity source material is more than 0.2 m/sec.
Bibliography:Application Number: TW200998121570