A magnetoresistive tunnel junction magnetic device and its application to mram

The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an inte...

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Bibliographic Details
Main Authors JAMET, MATTHIEU, DIENY, BERNARD, SAMSON, YVES, VEDYAEV, ANATOLY, WARIN, PATRICK
Format Patent
LanguageChinese
English
Published 01.11.2014
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an intermediate layer (130) acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer (120) from the storage magnetic layer (110). The potential profile of the intermediate layer (130) is asymmetrical across the thickness of said layer (130) so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.
Bibliography:Application Number: TW200695137826