Tunable antifuse element and method of manufacture

A tunable antifuse element (102, 202, 204, 504, 952) includes a substrate material (101) having an active area (106) formed in a surface, a gate electrode (104) having at least a portion positioned above the active area (106), and a dielectric layer (110) disposed between the gate electrode (104) an...

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Bibliographic Details
Main Authors DE SOUZA, RICHARD J, PARRIS, PATRICE M, MORRISON, JENNIFER H, ZITOUNI, MOANISS, CHE, WEIZE, MCKENNA, JOHN M
Format Patent
LanguageChinese
English
Published 21.06.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A tunable antifuse element (102, 202, 204, 504, 952) includes a substrate material (101) having an active area (106) formed in a surface, a gate electrode (104) having at least a portion positioned above the active area (106), and a dielectric layer (110) disposed between the gate electrode (104) and the active area (106). The dielectric layer (110) includes a tunable stepped structure (127). During operation, a voltage applied between the gate electrode (104) and the active area (106) creates a current path through the dielectric layer (110) and a rupture of the dielectric layer (110) in a rupture region (130). The dielectric layer (110) is tunable by varying the stepped layer thicknesses and the geometry of the layer.
Bibliography:Application Number: TW200695121896