Electronic device including semiconductor islands of different thicknesses over an insulating layer and a process of forming the same

• Main Authors: SADAKA, MARIAM G, NGUYEN, BICH-YEN, THEAN, VOON-YEW
• Format: Patent
• Language: Chinese; English
• Published: 21.03.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A process of forming an electronic device can include forming a patterned oxidation-resistant layer over a semiconductor layer that overlies a substrate, and patterning the semiconductor layer to form a semiconductor island. The semiconductor island includes a first surface and a second surface opposite the first surface, and the first surface lies closer to the substrate, as compared to the second surface. The process can also include forming an oxidation-resistant material along a side of the semiconductor island or selectively depositing a semiconductor material along a side of the semiconductor island. The process can further include exposing the patterned oxidation-resistant layer and the semiconductor island to an oxygen-containing ambient, wherein a first portion of the semiconductor island along the first surface is oxidized during exposing the patterned oxidation-resistant layer, the semiconductor island, and the oxidation-resistant material to an oxygen-containing ambient.