Method of making a dual strained channel semiconductor device

According to the embodiments to the present disclosure, the process of making a dual strained channel semiconductor device includes integrating strained Si and compressed SiGe with trench isolation for achieving a simultaneous NMOS and PMOS performance enhancement. As described herein, the integrati...

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Main Authors THOMAS, SHAWN G, WHITE, TED R, SADAKA, MARIAM G, BARR, ALEXANDER L, NGUYEN, BICH-YEN, JOVANOVIC, DEJAN, THEAN, VOON-YEW
Format Patent
LanguageChinese
English
Published 11.03.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract According to the embodiments to the present disclosure, the process of making a dual strained channel semiconductor device includes integrating strained Si and compressed SiGe with trench isolation for achieving a simultaneous NMOS and PMOS performance enhancement. As described herein, the integration of NMOS and PMOS can be implemented in several ways to achieve NMOS and PMOS channels compatible with shallow trench isolation.
AbstractList According to the embodiments to the present disclosure, the process of making a dual strained channel semiconductor device includes integrating strained Si and compressed SiGe with trench isolation for achieving a simultaneous NMOS and PMOS performance enhancement. As described herein, the integration of NMOS and PMOS can be implemented in several ways to achieve NMOS and PMOS channels compatible with shallow trench isolation.
Author THEAN, VOON-YEW
JOVANOVIC, DEJAN
THOMAS, SHAWN G
BARR, ALEXANDER L
SADAKA, MARIAM G
NGUYEN, BICH-YEN
WHITE, TED R
Author_xml – fullname: THOMAS, SHAWN G
– fullname: WHITE, TED R
– fullname: SADAKA, MARIAM G
– fullname: BARR, ALEXANDER L
– fullname: NGUYEN, BICH-YEN
– fullname: JOVANOVIC, DEJAN
– fullname: THEAN, VOON-YEW
BookMark eNrjYmDJy89L5WSw9U0tychPUchPU8hNzM7MS1dIVEgpTcxRKC4pSszMS01RSM5IzMtLBQqk5mYm5-ellCaX5BcppKSWZSan8jCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSS-JBwT2MLSyNTCycnYyKUAAC3JTHo
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID TWI389258BB
GroupedDBID EVB
ID FETCH-epo_espacenet_TWI389258BB3
IEDL.DBID EVB
IngestDate Fri Jul 19 15:19:22 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language Chinese
English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_TWI389258BB3
Notes Application Number: TW200695107353
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130311&DB=EPODOC&CC=TW&NR=I389258B
ParticipantIDs epo_espacenet_TWI389258BB
PublicationCentury 2000
PublicationDate 20130311
PublicationDateYYYYMMDD 2013-03-11
PublicationDate_xml – month: 03
  year: 2013
  text: 20130311
  day: 11
PublicationDecade 2010
PublicationYear 2013
RelatedCompanies FREESCALE SEMICONDUCTOR, INC
RelatedCompanies_xml – name: FREESCALE SEMICONDUCTOR, INC
Score 2.9943087
Snippet According to the embodiments to the present disclosure, the process of making a dual strained channel semiconductor device includes integrating strained Si and...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Method of making a dual strained channel semiconductor device
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130311&DB=EPODOC&locale=&CC=TW&NR=I389258B
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5qFfWmVbG-2IPkFszTZA9ByIsqpC0SbW-lm2xoDyaliQj-emeXRL3obdmFYXfhm5l9fPMB3HKqM8dymUqZZquY_2sqzU1NtTXLcoqiYJlkvSfj-9GL9TS35z1YdVwYWSf0QxZHRERliPdG-uvNzyVWKP9W1ndsjV3VQ5x6odKejoVDRuyGvhdNJ-EkUILAS2fK-Nl7xMBs2K6_A7siiRZV9qNXX3BSNr8DSnwEe1O0VTbH0PtcDeAg6HTXBrCftM_d2GyRV5-Al0ipZ1IV5E0KSJElETQqUkuRB54TQeEtOXaI7-5VKeq4VluSc-EKToHEURqMVJzH4nvJi3TWTdg3z6BfViU_B2IzjK_cwl3npuWwnOoZ5SyjtmO4y8LJhzD808zFP2OXcGhIlQdT1fUr6Dfbd36NsbZhN3KbvgCxLYUg
link.rule.ids 230,309,786,891,25594,76903
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3fT4MwEL7MaZxvOjWbP_tg9kaEAQIPxAQYYTrYYtDtjaxQMh-EZWBM_Ou9NkN90bfmmlyuTe6u1_a7D-CGWQo1NJNKFpV1Cc__smRlqizpsqYZeZ7TVKDew-gueNYeFvqiBasGCyP6hH6I5ojoUSn6ey3i9frnEssTfyurW_qKovLej21vsK2OeUBG3_UcezSbelN34Lp2PB9ET_YYE_NQN50d2DWwIBSF0ovDMSnr3wnFP4S9Geoq6iNofa660HEb3rUu7Ifb524cbj2vOgY7FFTPpMzJmyCQIkvCYVSkEiQPLCMcwlswFPDv7mXB-7iWG5IxHgpOgPij2A0ktCP5XnISzxuDHfUU2kVZsB4QnWJ-ZRruOlM1g2aWklqMppZuDM1lbmR96P-p5uyfuWvoBHE4SSbj6PEcDoaC8UGVFOUC2vXmnV1i3q3pldiyLxAuiAo
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Method+of+making+a+dual+strained+channel+semiconductor+device&rft.inventor=THOMAS%2C+SHAWN+G&rft.inventor=WHITE%2C+TED+R&rft.inventor=SADAKA%2C+MARIAM+G&rft.inventor=BARR%2C+ALEXANDER+L&rft.inventor=NGUYEN%2C+BICH-YEN&rft.inventor=JOVANOVIC%2C+DEJAN&rft.inventor=THEAN%2C+VOON-YEW&rft.date=2013-03-11&rft.externalDBID=B&rft.externalDocID=TWI389258BB