Method of forming narrowly spaced flash memory contact openings and lithography masks
A method is provided for creating optical features on a lithography mask for use in patterning a series of openings of an etch mask on a semiconductor device wafer, comprising creating a series of optical features spaced on the lithography mask from one another along a first direction, where the ind...
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Main Authors | , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
21.02.2013
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Subjects | |
Online Access | Get full text |
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Summary: | A method is provided for creating optical features on a lithography mask for use in patterning a series of openings of an etch mask on a semiconductor device wafer, comprising creating a series of optical features spaced on the lithography mask from one another along a first direction, where the individual optical features have first mask feature dimensions along the first direction that are smaller than a desired first dimension for the openings to be patterned in the etch mask. |
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Bibliography: | Application Number: TW200594126154 |