A method of ultra-shallow junction formation using si film alloyed with carbon

A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer i...

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Main Authors ZOJAJI, ALI, SANCHEZ, ERROL ANTONIO C, YE, ZHIYUAN, KIM, YIHWAN, FOAD, MAJEED A, CHO, YONAH
Format Patent
LanguageChinese
English
Published 11.02.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.
Bibliography:Application Number: TW20070115493