Methods of fabricating metal contact structures for laser diodes using backside uv exposure

Methods of fabricating a metal contact structure for a laser diodes are provided, wherein the method comprises providing a UV transparent semiconductor substrate, a UV transparent semiconductor epilayer defining a ridge disposed between etched epilayer edges, the epilayer being disposed over the UV...

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Bibliographic Details
Main Authors JINGQUN XI, CHUNG-EN ZAH
Format Patent
LanguageChinese
English
Published 21.05.2012
Subjects
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