Methods of fabricating metal contact structures for laser diodes using backside uv exposure
Methods of fabricating a metal contact structure for a laser diodes are provided, wherein the method comprises providing a UV transparent semiconductor substrate, a UV transparent semiconductor epilayer defining a ridge disposed between etched epilayer edges, the epilayer being disposed over the UV...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
21.05.2012
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Subjects | |
Online Access | Get full text |
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