Methods of fabricating metal contact structures for laser diodes using backside uv exposure

Methods of fabricating a metal contact structure for a laser diodes are provided, wherein the method comprises providing a UV transparent semiconductor substrate, a UV transparent semiconductor epilayer defining a ridge disposed between etched epilayer edges, the epilayer being disposed over the UV...

Full description

Saved in:
Bibliographic Details
Main Authors JINGQUN XI, CHUNG-EN ZAH
Format Patent
LanguageChinese
English
Published 21.05.2012
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Methods of fabricating a metal contact structure for a laser diodes are provided, wherein the method comprises providing a UV transparent semiconductor substrate, a UV transparent semiconductor epilayer defining a ridge disposed between etched epilayer edges, the epilayer being disposed over the UV transparent semiconductor substrate, and a UV opaque metal layer disposed over the epilayer ridge, applying at least one photoresist layer (positive photoresist, image reversal photoresist, or negative photoresist) over the opaque metal layer and epilayer edges, and selectively developing regions of the photoresist layer via backside exposure to UV light with the opaque metal layer used as a photolithographic mask.
Bibliography:Application Number: TW200897119981