Magnetic random access memory

A magnetic random access memory includes a substrate, a free layer and a spacer layer. The substrate and the free layer are made of a vertical anisotropy ferrimagentic thin film. The spacer layer is sandwiched between the substrate and the free layer and is made of an insulating layer. The method us...

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Bibliographic Details
Main Authors WU, TEHO, ALBERTO CANIZO CABRERA, YE, LINHSIU
Format Patent
LanguageChinese
English
Published 01.10.2011
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A magnetic random access memory includes a substrate, a free layer and a spacer layer. The substrate and the free layer are made of a vertical anisotropy ferrimagentic thin film. The spacer layer is sandwiched between the substrate and the free layer and is made of an insulating layer. The method uses a modified Landau-Lifshitz-Gilbert equation to obtain a critical current value as a function of exchange coupling constant. The critical current value is predictable under several external magnetic fields being applied. When the exchange coupling constant is proportionally varied, the critical current value is reduced to a third of its original value under an optimum state.
Bibliography:Application Number: TW200796130387