Low basal plane dislocation bulk grown sic wafers
A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm2) of surface area that has a basal plane dislocation volume density of less than about 500 cm-2 for a 4 degree off-axis wafer.
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
11.06.2011
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Subjects | |
Online Access | Get full text |
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Summary: | A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm2) of surface area that has a basal plane dislocation volume density of less than about 500 cm-2 for a 4 degree off-axis wafer. |
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Bibliography: | Application Number: TW200695112542 |