An enhancement mode metal-oxide-semiconductor field effect transistor and method for forming the same

An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) is provided. The EMOSFET has a III-V compound semiconductor substrate and an epitaxial layer structure overlying the III-V compound semiconductor substrate. The epitaxial material layer has a channel layer a...

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Bibliographic Details
Main Authors RAY, MARCUS, PASSLACK, MATTHIAS, MEDENDORP, NICHOLAS, HARTIN, OLIN L
Format Patent
LanguageChinese
English
Published 11.11.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) is provided. The EMOSFET has a III-V compound semiconductor substrate and an epitaxial layer structure overlying the III-V compound semiconductor substrate. The epitaxial material layer has a channel layer and at least one doped layer. A gate oxide layer overlies the epitaxial layer structure. The EMOSFET further includes a metal gate electrode overlying the gate oxide layer and source and drain ohmic contacts overlying the epitaxial layer structure.
Bibliography:Application Number: TW200493100253