TWI318424B

In an atmospheric-pressure plasma processing apparatus, a first metal surface 21a of a first stage portion 21 of a stage 20 is exposed and an object to be processed W composed of a dielectric material is placed on the first metal surface 21a. A second stage portion 22 is disposed on a peripheral edg...

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Main Authors MATSUZAKI, JUNICHI, MAYUMI, SATOSHI, FUKUSHI, MAKOTO, TAKEUCHI, TOSHIMASA, SAITO, NAOMICHI, FURUNO, YOSHIHIKO, NISHIKAWA, OSAMU, NAKANO, YOSHINORI, NAKAJIMA, SETSUO
Format Patent
LanguageChinese
Published 11.12.2009
Subjects
AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOSITIONS BASED THEREON
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL PROCESSES OF COMPOUNDING
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
WORKING-UP
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Summary:In an atmospheric-pressure plasma processing apparatus, a first metal surface 21a of a first stage portion 21 of a stage 20 is exposed and an object to be processed W composed of a dielectric material is placed on the first metal surface 21a. A second stage portion 22 is disposed on a peripheral edge of the first stage portion 21. A solid dielectric layer 25 is disposed on a second metal 24 of the second stage portion 22. A peripheral portion of the object W is placed on an inner dielectric portion 26 of the solid dielectric layer 25. An electrode 11 generates a run up discharge D2 in a second movement range R2 above the second stage portion 22. Then, the electrode 11 is moved to a first movement range R1 above the first stage portion 21 and generates a regular plasma discharge D1.
Bibliography:Application Number: TW200695134855