Approach and apparatus for etching a substrate in an etching fluid

• Main Authors: JURGEN OSTERKAMP, JORG FRANZKE, MATTHIAS NIESE, JURGEN SCHWECKENDIEK
• Format: Patent
• Language: Chinese; English
• Published: 01.08.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

The invention relates to a method for etching substrates (4) received in an etching solution (2). Said method comprises the following steps: A basin (1) which can receive the etching solution (2) is prepared, the substrate (4) is completely immersed in the etching solution (2), a flow which surrounds the substrate (4) is produced and the speed and/or direction of the flow can be periodically altered.