TWI312172B

• Main Authors: YOSHIOKA, MASAO, MIZOGUCHI, YASUTAKA, SUZUKI, KENJI, ISHIZUKA, HOTAKA, SATOH, KOHICHI, FANG, CHENG
• Format: Patent
• Language: Chinese
• Published: 11.07.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention provides a forming method of tungsten film capable of increasing the production throughput and increasing the filling property, such as having good filling property when the diameter of the filling hole is small. Inside the processing Container 22, when forming tungsten film on the processed body W, the returning-gas supply process for supplying the returning gas and the tungsten gas supply process for supplying gas containing tungsten are alternately and repeatedly performed, so as to form the initial stage tungsten film formation process 79 of the initial stage tungsten film. The returning gas is made to flow into the processed container and the flow rate of tungsten-contained gas is also increased to gradually increase the pressure inside the processing container so as to form the inactivated tungsten film formation process 84 of the inactivated tungsten film. Both the returning gas and the tungsten-contained gas are made to continuously flow so as to form the main tungsten film forma