Semiconductor device and method for manufacturing the same

A semiconductor device includes a substrate, a first device situated on the substrate, the first device including a source and a drain each situated extending a first depth within the substrate, and a second device situated on the substrate, the second device including a source and a drain each exte...

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Bibliographic Details
Main Authors CHEN, HUNG-WEI, CHENG, SHUI-MING, ZHONG, TANG-XUAN, LIU, SHENG-DA
Format Patent
LanguageEnglish
Published 21.08.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
SEMICONDUCTOR DEVICES
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Summary:A semiconductor device includes a substrate, a first device situated on the substrate, the first device including a source and a drain each situated extending a first depth within the substrate, and a second device situated on the substrate, the second device including a source and a drain each extending a second depth within the substrate, the second depth not equal to the first depth. A method for manufacturing a semiconductor device is also disclosed.
Bibliography:Application Number: TW20050137585