Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas
A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising: a fluorocarbon gas, a fluorine-containing oxidizer...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
21.07.2007
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Subjects | |
Online Access | Get full text |
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Summary: | A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising: a fluorocarbon gas, a fluorine-containing oxidizer gas selected from the group consisting of a hypofluorite, a fluoroperoxide, a fluorotrioxide, and combinations thereof; and optionally an inert diluent gas. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to form active species that at least partially react with and remove at least a portion of the dielectric material. |
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Bibliography: | Application Number: TW200493120820 |