Ion implantation apparatus and method for implanting ions by using the same

Disclosed are an ion implantation apparatus and a method for implanting ions by using the same. The ion implanter for implanting ions into a wafer, including: a first quadrupole magnet assembly for focusing an ion beam transmitted from an ion beam source; a scanner for deflecting the transmitted ion...

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Bibliographic Details
Main Authors ROUH, KYUNG-BONG, JIN, SEUNG-WOO, LEE, MIN-YONG
Format Patent
LanguageEnglish
Published 21.03.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed are an ion implantation apparatus and a method for implanting ions by using the same. The ion implanter for implanting ions into a wafer, including: a first quadrupole magnet assembly for focusing an ion beam transmitted from an ion beam source; a scanner for deflecting the transmitted ion beam in directions of an X-axis and a Y-axis; a second quadrupole magnet assembly for converging and diverging the ion beam passing through the scanner in directions of the X and the Y-axes; and a beam parallelizer for rotating the ion beam in synchronization with the second quadrupole magnet assembly, thereby implanting the ion beam into the wafer.
Bibliography:Application Number: TW200493141294