Manufacturing method of semiconductor structure

• Main Authors: GENZ, OLIVER, SCHMIDT, BARBARA+, REB, ALEXANDER, MACHILL, STEFAN, KIRCHHOFF, MARKUS
• Format: Patent
• Language: English
• Published: 21.01.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention proposes a manufacturing method of semiconductor structure that includes the following steps: preparing a semiconductor substrate (1); sequentially disposing the first mask layer (5), the second mask layer (7), and the third mask layer (9) on the surface of semiconductor substrate (1); by using the first window (11, 11a to 11h) inside the third mask layer (9) to align with the second mask layer (7) so as to make structure and duplicate the first window (11, 11a to 11h) in the second mask layer (7); by using the first window (11, 11a to 11h) inside the second mask layer (7) to align with the first mask layer (7) so as to make structure and duplicate the first window (11, 11a to 11h) in the first mask layer (7); expanding the first windows (11, 11a to 11h) inside the third mask layer (9) so as to form the second windows (13, 13a to 13b) in the third mask layer (9) in the manufacturing step where mask is not used; using the second windows (13, 13a to 13b) in the third mask layer (9) to remake structure process onto the structure of the second mask layer (7) so as to duplicate the second windows (13, 13a to 13b) in the second mask layer (7); using the first mask layer (5), which has been undergone with making structure process, to perform making structure process onto the semiconductor substrate (1); using the second windows (13, 13a to 13b) in the second mask layer (7) to conduct a remake structure process onto the structure of the first mask layer (5); and using the first mask layer (5), which has been undergone with a remaking structure process, to perform a remaking structure process onto the semiconductor substrate (1).