Methods for forming low resistivity, ultrashallow junctions with low damage

Methods for forming ultrashallow junctions in semiconductor wafers include introducing into a shallow surface layer of a semiconductor wafer a dopant material that is selected to form charge carrier complexes which produce at least two charge carriers per complex, and short-time thermal processing o...

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Bibliographic Details
Main Author DOWNEY, DANIEL F
Format Patent
LanguageEnglish
Published 21.01.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods for forming ultrashallow junctions in semiconductor wafers include introducing into a shallow surface layer of a semiconductor wafer a dopant material that is selected to form charge carrier complexes which produce at least two charge carriers per complex, and short-time thermal processing of the doped surface layer to form the charge carrier complexes. The short-time thermal processing step may be implemented as flash rapid thermal processing of the doped surface layer, sub-melt laser processing of the doped surface layer, or RF or microwave annealing of the doped surface layer.
Bibliography:Application Number: TW200392112551