A method for manufacturing a silicon-containing polycrystalline or nano-particle-embedded film and photo detector thereof having characteristics of high dissociation rate, low bombardment effect and easy to nucleate crystallization on various surfaces whereby a high quality silicon-containing film can be formed on various substrates under a condition of low temperature

• Main Authors: SHIEH, JIA-MIN, LAI, YI-FAN, DAI, BOU-TONG
• Format: Patent
• Language: Chinese; English
• Published: 11.12.2006
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

This invention discloses one kind of method for manufacturing silicon-containing film by utilizing a technology of inductively coupled plasma chemical vapor deposition. This invention first supplies a silicon-containing gas and hydrogen into a reaction chamber and exerts the radio frequency electricity with its power larger than 750 watts to decompose the gas inside the reaction chamber to form an inductively coupled plasma, among which the chemical vapor deposition of the inductively coupled plasma forms the silicon-containing film on a substrate installed inside the reaction chamber. Besides, a germanium-containing gas is simultaneously supplied into such reaction chamber to form a silicon-germanium-containing film on such substrate. Because characteristics of the inductively coupled plasma like high dissociation rate, low bombardment effect and easy to nucleate crystallization on various surfaces, this invention is capable of forming a high quality silicon-containing film on various substrates under a cond