Robust ultra-low k interconnect structures using bridge-then-metallization fabrication sequence

A method for fabricating low k and ultra-low k multiplayer interconnect structures on a substrate includes: a set of interconnects separated laterally by air gaps; forming a support layer in the via level of a dual damascene structure that is only under the metal line; removing a sacrificial dielect...

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Main Authors PURUSHOTHAMAN, SAMPATH, SAENGER, KATHERINE L, COLBURN, MATTHEW E, HUANG, ELBERT E, NITTA, SATYANARAYANA V
Format Patent
LanguageEnglish
Published 01.11.2006
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating low k and ultra-low k multiplayer interconnect structures on a substrate includes: a set of interconnects separated laterally by air gaps; forming a support layer in the via level of a dual damascene structure that is only under the metal line; removing a sacrificial dielectric through a perforated bridge layer that connects the top surfaces of the interconnects laterally; performing multilevel extraction of a sacrificial layer; sealing the bridge in a controlled manner; and decreasing the effective dielectric constant of a membrane by perforating it using sub-optical lithography patterning techniques.
Bibliography:Application Number: TW200392133506