Method and system for etching a high-k dielectric material

A method for heating a substrate between a first process and a second process using a plasma is described. The heating method comprises thermally isolating the substrate on the substrate holder by removing the backside supply of a heat transfer gas and removing the clamping force. Furthermore, an in...

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Bibliographic Details
Main Authors KAMBARA, HIROMITSU, CHEN, LEE, IWAMA, NOBUHIRO
Format Patent
LanguageEnglish
Published 11.10.2006
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for heating a substrate between a first process and a second process using a plasma is described. The heating method comprises thermally isolating the substrate on the substrate holder by removing the backside supply of a heat transfer gas and removing the clamping force. Furthermore, an inert gas, such as a Noble gas, is introduced to the plasma processing system and a plasma is ignited. The substrate is exposed to the inert plasma for a period of time sufficient to elevate the temperature of the substrate from a first temperature (i.e., typically less than 100 DEG C) to a second temperature (i.e., typically of order 400 DEG C).
Bibliography:Application Number: TW20040112020