Semiconductor device, electro-optical device, integrated circuit, and electronic equipment

• Main Author: HIROSHIMA, YASUSHI
• Format: Patent
• Language: English
• Published: 21.05.2006
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a method of manufacturing a semiconductor device, in which it can be materialized to activate the impurity of the source region and drain region even by thermal treatment at relatively low temperature so that a thin film transistor with high performance can be obtained. A method of manufacturing a semiconductor device of the present invention comprises: an origin part forming process in order to form a plurality of origin parts (125), each of which works as an origin for crystallization of a semiconductor film on a substrate (11); a semiconductor film forming process to form the semiconductor film on the substrate where the origin parts have been formed; a thermal treatment process in which the semiconductor film is thermally treated in order to form a plurality of nearly single crystalline grains, each of which is almost centered at each of the plurality of origin parts (125); a patterning process to carry out patterning the semiconductor film in order to form a transistor region (133); and an element forming process to form a gate insulation film (14) and a gate electrode (15) on the transistor region so as to form a thin film transistor, wherein the origin parts (125) are formed in such a manner that the nearly single crystalline grains are included in the source region and drain region (133) of the patterning process.