Lithographic apparatus and device manufacturing method

In a purge gas system for a lithographic apparatus, a rate of flow of purge gas to the system is reduced substantially once a contamination level has fallen below a threshold level. The control may be on the basis of a detected level of contamination or on the basis of a timetable.

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Bibliographic Details
Main Authors TEUNISSEN, FRANCISCUS JOHANNES, HERMAN MARIA, VAN DER NET ANTONIUS, JOHANNES, LOCK, WILLEM
Format Patent
LanguageEnglish
Published 11.03.2006
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CALCULATING
CINEMATOGRAPHY
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:In a purge gas system for a lithographic apparatus, a rate of flow of purge gas to the system is reduced substantially once a contamination level has fallen below a threshold level. The control may be on the basis of a detected level of contamination or on the basis of a timetable.
Bibliography:Application Number: TW20030125039