Method for repairing opaque defects on semiconductor mask reticles

A method is disclosed for repairing an opaque defect on a mask substrate. After examining one or more opaque patterns in a predetermined area of the mask substrate, at least one opaque defect in the opaque patterns is identified based on a difference between its light reflection rate and a reference...

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Bibliographic Details
Main Authors WEI, SHAOI, CHANG, CHI-KANG, LIN, WEI-LIAN, CHEN, CHIA-HSIEN, LAI, CHIAN-HUN
Format Patent
LanguageEnglish
Published 01.03.2006
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:A method is disclosed for repairing an opaque defect on a mask substrate. After examining one or more opaque patterns in a predetermined area of the mask substrate, at least one opaque defect in the opaque patterns is identified based on a difference between its light reflection rate and a reference reflection rate. A residue height of the opaque defect is further determined based on its light transmission rate, and a repair formula such as an etching dosage is devised based on the determined residue height.
Bibliography:Application Number: TW20040141043