Method of fabricating bottle trench capacitors using an electrochemical etch with electrochemical etch stop

A method of forming trench capacitors in, e.g., a DRAM device, using an electrochemical etch with built-in etch stop to fabricate well-defined bottle-shaped capacitors is described. The process includes formation of a sacrificial silicon layer after initial deep trench formation, wherein the sacrifi...

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Bibliographic Details
Main Author KUDELKA, STEPHAN
Format Patent
LanguageEnglish
Published 21.02.2006
Edition7
Subjects
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CAPACITORS
CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS
SEMICONDUCTOR DEVICES
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Summary:A method of forming trench capacitors in, e.g., a DRAM device, using an electrochemical etch with built-in etch stop to fabricate well-defined bottle-shaped capacitors is described. The process includes formation of a sacrificial silicon layer after initial deep trench formation, wherein the sacrificial layer is formed by doping, and upon its removal, a bottle trench is formed. A second region of doped silicon located below the sacrificial layer is resistant to the chemical etch performed to remove the sacrificial layer, and thereby renders the bottle trench formation process self-limiting.
Bibliography:Application Number: TW200594102551