Manufacturing method of a thin film transistor-liquid crystal display

A manufacturing method of TFT LCD with three mask processes is disclosed. The method includes following steps: providing a transparent substrate; forming a transparent conductive layer., a first insulating layer, and a second metal layer on the substrate in sequence; using a halftone photolithograph...

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Bibliographic Details
Main Author CHEN, HUNG-DE
Format Patent
LanguageEnglish
Published 11.09.2005
Edition7
Subjects
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Summary:A manufacturing method of TFT LCD with three mask processes is disclosed. The method includes following steps: providing a transparent substrate; forming a transparent conductive layer., a first insulating layer, and a second metal layer on the substrate in sequence; using a halftone photolithography and an etching technology for forming a source area, a drain area, and a pixel electrode area within every pixel area and forming data signal lines at two sides of every pixel area; forming a semiconductor layer and a second insulating layer on the substrate in sequence; using a photolithography and an etching technology for forming a channel area of a thin film transistor area and contacts on the source area, the drain area, and the data signal lines; forming a third metal layer and a third insulating layer on the substrate in sequence; using a photolithography and an etching technology for forming scanning signal lines and gate lines.
Bibliography:Application Number: TW20040112234