Manufacturing method of a thin film transistor-liquid crystal display
A manufacturing method of TFT LCD with three mask processes is disclosed. The method includes following steps: providing a transparent substrate; forming a transparent conductive layer., a first insulating layer, and a second metal layer on the substrate in sequence; using a halftone photolithograph...
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Main Author | |
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Format | Patent |
Language | English |
Published |
11.09.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A manufacturing method of TFT LCD with three mask processes is disclosed. The method includes following steps: providing a transparent substrate; forming a transparent conductive layer., a first insulating layer, and a second metal layer on the substrate in sequence; using a halftone photolithography and an etching technology for forming a source area, a drain area, and a pixel electrode area within every pixel area and forming data signal lines at two sides of every pixel area; forming a semiconductor layer and a second insulating layer on the substrate in sequence; using a photolithography and an etching technology for forming a channel area of a thin film transistor area and contacts on the source area, the drain area, and the data signal lines; forming a third metal layer and a third insulating layer on the substrate in sequence; using a photolithography and an etching technology for forming scanning signal lines and gate lines. |
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Bibliography: | Application Number: TW20040112234 |