Etching system and method for treating the etching solution thereof

The etching system of the present invention includes a processing trench having silicon-contained etching liquid, a cooling trench, a pre-heat trench, a first pipe capable of transferring the etching liquid from the processing trench to the cooling trench, a second pipe capable of transferring the e...

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Bibliographic Details
Main Authors LU, HUNG-YUEH, CHANG, HONG-LONG
Format Patent
LanguageEnglish
Published 01.07.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DECORATIVE ARTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MOSAICS
PAPERHANGING
PERFORMING OPERATIONS
PRODUCING DECORATIVE EFFECTS
SEMICONDUCTOR DEVICES
TARSIA WORK
TRANSPORTING
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Summary:The etching system of the present invention includes a processing trench having silicon-contained etching liquid, a cooling trench, a pre-heat trench, a first pipe capable of transferring the etching liquid from the processing trench to the cooling trench, a second pipe capable of transferring the etching liquid from the cooling trench to the pre-heat trench, and a third pipe capable of transferring the etching liquid from the pre-heat trench to the processing trench. The method for treating the etching solution of the present invention comprises: first using an etching solution to perform an etching process for a silicon-contained film; next, cooling the etching to a first temperature so as to form a silicon-saturated etching liquid; and filtering the silicon-saturated liquid to remove silicide particles larger than a predetermined size, and then heating the same to a second temperature so as to form a non-saturated etching liquid for performing another etching process, where the second temperature is higher than the first temperature by at least 10 DEG C.
Bibliography:Application Number: TW20040114904