Polymer, resist material, and method for forming pattern

• Main Authors: KINSHO, TAKESHI, HATAKEYAMA, JUN, NISHI, TSUNEHIRO, WATANABE, TAKERU, HASEGAWA, KOJI
• Format: Patent
• Language: English
• Published: 11.03.2005
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; THEIR PREPARATION OR CHEMICAL WORKING-UP

Disclosed is a high molecular compound having a weight-average molecular weight of 1,000-500,000 and comprising recurring units of formula (1). (Where R1 is H, methyl or CH2CO2R3; R2 is H, methyl or CO2R3; R3 is alkyl; R4 is H, alkyl, alkoxyalkyl or acyl; R5 and R15 are acid labile groups; at least one of R6 to R9 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the remainders are H or alkyl; at least one of R10 to R13 is a monovalent hydrocarbon group containing a -CO2- partial structure, and the remainders are H or alkyl; R14 is a polycyclic hydrocarbon group or polycyclic hydrocarbon-containing alkyl group; Z is a trivalent hydrocarbon group, X is -CH2- or -O-; k is 0 or 1, x is a number greater than 0, a, b, c and d are numbers equal to or greater than 0) The resist material of the present invention can detect high energy radiation, and has significantly improved sensitivity, resolution and etching resistance, and is therefore very useful in microfabrication of electron beam or far ultraviolet light. Particularly, it is less absorptive for the exposure wavelength of ArF plasma laser and KrF plasma laser and therefore is ready to form fine patterns that are normal to a substrate.