Connection terminals and manufacturing method of the same, semiconductor device and manufacturing method of the same

A first protection film (3) and a second protection film (4) are formed on an electrode pad (2). Bumps (5) are formed at sites where the deposited first and second protection films (3), (4) are both removed. The openings (3a) where the lower, first protection film (3) is removed are larger than the...

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Bibliographic Details
Main Authors ASAZU, TAKURO, ONO, ATSUSHI, YAMAGUCHI, SHINJI
Format Patent
LanguageEnglish
Published 21.12.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A first protection film (3) and a second protection film (4) are formed on an electrode pad (2). Bumps (5) are formed at sites where the deposited first and second protection films (3), (4) are both removed. The openings (3a) where the lower, first protection film (3) is removed are larger than the openings (4a) where the upper, second protection film (4) is removed, so that the upper, second protection film (4) has an overhanging structure. The bottom periphery of the bump (5) is formed to extend under the second protection film (4).
Bibliography:Application Number: TW200392109745