Method of manufacturing electronic device

The subject application provides a method of manufacturing semiconductor device using lithography to form finer circuit pattern and to produce device with higher integration. In a method of forming a circuit pattern including fine pattern features and fine space, a hard mask layer is patterned with...

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Bibliographic Details
Main Authors OKAGAWA, TAKASHI, YAMAGUCHI, ATSUMI, YAMADA, TETSUYA, UENO, ATSUSHI, TSUJITA, KOUICHIROU
Format Patent
LanguageEnglish
Published 01.11.2004
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CALCULATING
CINEMATOGRAPHY
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:The subject application provides a method of manufacturing semiconductor device using lithography to form finer circuit pattern and to produce device with higher integration. In a method of forming a circuit pattern including fine pattern features and fine space, a hard mask layer is patterned with a first pattern defined by eliminating the fine space for merging the pattern features. Thereafter the hard mask layer is shrank. Next, the hard mask layer is patterned with a second pattern that is defined on the basis of the fine space. Finally, the circuit pattern is formed in an underlying layer using the hard mask layer as a mask.
Bibliography:Application Number: TW20030109888