Method of manufacturing electronic device
The subject application provides a method of manufacturing semiconductor device using lithography to form finer circuit pattern and to produce device with higher integration. In a method of forming a circuit pattern including fine pattern features and fine space, a hard mask layer is patterned with...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
01.11.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | The subject application provides a method of manufacturing semiconductor device using lithography to form finer circuit pattern and to produce device with higher integration. In a method of forming a circuit pattern including fine pattern features and fine space, a hard mask layer is patterned with a first pattern defined by eliminating the fine space for merging the pattern features. Thereafter the hard mask layer is shrank. Next, the hard mask layer is patterned with a second pattern that is defined on the basis of the fine space. Finally, the circuit pattern is formed in an underlying layer using the hard mask layer as a mask. |
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Bibliography: | Application Number: TW20030109888 |