Bases and surfactants and their use in photoresist compositions for microlithography

• Main Authors: CRAWFORD, MICHAEL KARL, ZUMSTEG, FREDRICK CLAUS JR, SCHADT, FRANK L. III, BERGER, LARRY L
• Format: Patent
• Language: English
• Published: 11.06.2004
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

A photoresist composition having: (A) a polymer selected from the group consisting of: (a) a fluorine-containing copolymer having a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic; (b) a branched polymer containing protected acid groups, said polymer comprising one or more branch segment(s) chemically linked along a linear backbone segment; (c) fluoropolymers having at least one fluoroalcohol group having the structure: -C(Rf)(Rf')OH, wherein Rf and Rf' are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2)n wherein n is 2 to 10; (d) amorphous vinyl homopolymers of perfluoro(2,2-dimethyl-1,3-dioxole) or CX2=CY2 where X=F or CF3 and Y=-H or amorphous vinyl copolymers of perfluoro(2,2-dimethyl-1,3-dioxole) and CX2=CY2; and (e) nitrile/fluoroalcohol-containing polymers prepared from substituted or unsubstituted vinyl ethers; (B) at least one photoactive component; and (C) a functional compound selected from the group consisting of a base and a surfactant. The polymer may have an absorption coefficient of less than about 5.0 mum<-1> at a wavelength of about 157 nm. These photoresist compositions have improved imaging properties.