Deposition and annealing of multicomponent ZrSnTi and HfSnTi oxide thin films using solventless liquid mixture of precursors

• Main Authors: SENZAKI, YOSHIHIDE, ROBERTS, DAVID ALLEN, NORMAN, JOHN ANTHONY THOMAS, HOCHBERG, ARTHUR KENNETH, FLEMING, ROBERT MCLEMORE
• Format: Patent
• Language: English
• Published: 11.04.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CABLES; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CONDUCTORS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INSULATORS; METALLURGY; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.